Effects of antiferromagnetic spin structures on the induced perpendicular magnetic anisotropy in antiferromagnetic/ferromagnetic thin films
Bo-Yao Wang1*, Jing-Yu Ning1, Ming-Shian Tsai1, Chun-Wei Huang1, Po-Han Lin1, Chun-Chieh Chung1, Nae-Yeou Jih2, Chun-I Lu3, Tzu-Hung Chuang3, Der-Hsin Wei3
1Department of Physics, National Changhua University of Education, Changhua, Taiwan
2The Center of Teacher Education, National Chung Hsing University, Taichung, Taiwan
3National Synchrotron Radiation Research Center,, Hsinchu, Taiwan
* Presenter:Bo-Yao Wang, email:bywang1735@gmail.com
Antiferromagnet is a class of magnetic material with rich physics and potential application. Recently our groups have observed a new feature of an antiferromagnet, which can drive the magnetization of adjacent ferromagnetic (FM) films perpendicular [1-2]. In this talk, I will show you that the induced perpendicular magnetic anisotropy (PMA) on FM film is highly sensitive to the exchange interaction between the uncompensated moments of the antiferromagnetic (AFM) film at the interface and the moments at the volume with specific ordered AFM spins. Our result clearly demonstrated that in a selected AFM spin structure with out-of-plane uncompensated moments, the magnitude of the induced PMA in its neighbouring Co/Ni or Co/Fe films could be significantly enhanced by an establishment of a collinear-like exchange interaction between the volume moments of the AFM film and the perpendicular magnetic FM film [3,4]. Moreover, I will also show you the limitation of induced PMA by e-fct Mn film with in-plane layered spin structure. Finally, I will present that the antiferromagnet-induced PMA occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through the mechanism of magnetic proximity effects. [5,6].

Keywords: Perpendicular magnetic anisotropy, Antiferromagnetic thin film, Uncompensated moments