2D materials nanoelectronics and its device physics
YannWen Lan1*
1Physics, National Taiwan Normal University, Taipei, Taiwan
* Presenter:YannWen Lan, email:ywlan@ntnu.edu.tw
The 20th century ushered in the Information Age with the silicon electronics industry’s aggressive and persistent scaling down of the Complementary Metal-Oxide-Semiconductor Field-Effect Transistors’ (MOSFET) dimensions. However, we now face the impending stall of Moore’s Law and must find alternative materials and novel device concepts which may augment commercial silicon technology for enabling high performance and low power consumption. During the last decade, tremendous research efforts have been focused on two-dimensional (2D) materials due to their rich physics and great potentials for many applications. Accordingly, in this talk we present some experimental results of 2D materials electronics, including piezotronics[1], tunnelling field effect transistor [2], vertical hot electron transistor [3], photodetector [4], magnetic property for spintronics [5], quasi-heterojunction bipolar transistor [6],quantum tunnelling behaviour for tunnelling transistor [7] and high performance 2D field effect transistor [8]. Our results suggest that electronics based on 2D materials could potentially lead to energy generation and low power dissipation for future device applications.

1. "Piezoelectric effect in CVD-grown atomic-monolayer triangular MoS2 piezotronics" Nature Communications, 6, pp7430, 2015. (Corresponding author, IF:12.353)
2. “Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor” SMALL, doi:10.1002/smll.201601310, 2016. (Corresponding author, IF:9.598)
3. “ High-current gain two-dimensional MoS2-base hot-electron transistors”. Nano Letters 15, 7905-7912, 2015. (Corresponding author, IF:13.592)
4. “Self-aligned graphene oxide nanoribbon stack with gradient bandgap for visible-light photodetection. Nano energy, 27, 114-120, 2016. (Corresponding author, IF:13.120)
5. “Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenides/Ferromagnet Bilayers” Nano Letters, 16(12), 7514-7520,2016. (Equal first author, IF:13.592)
6. “Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon” ACS Nano, 11(11), 11015-11023, 2017 (Corresponding author, IF:13.942)
7. “Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2” Nano Letters, 14(5), pp 2381-2386, 2014. (Corresponding author, IF:13.592)
8. “Effective N-Methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors” Nano Research, Accepted: 5 October 2018. (Corresponding author, IF:7.994)

Keywords: 2D materials, field effect transistor, MoS2, nanoelectronics, Resonant tunneling