Linear magnetoresistance in disordered graphene
Chiashain Chuang1*, Chi-Te Liang2, Gil-Ho Kim3, Yanfei Yang4, Ya-Ping Hsieh5, Randolph E. Elmquist4, Nobuyuki Aoki6
1Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan, Taiwan
2Department of Physics, National Taiwan University, Taipei, Taiwan
3School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, Korea
4National Institute of Standard and Technology, Gaithersburg, Taiwan
5Institute of Atomic and Molecular Science, Academia Sinica, Taipei, Taiwan
6Graduate of School of Engineering, Chiba University, Chiba, Japan
* Presenter:Chiashain Chuang,
Linear magnetoresistance (LMR) is an interesting phenomenon in condensed matter physics. I will present our recent works on LMR observed in disordered graphene systems. Recently, disordered graphene can be considered as a resistance network. I will introduce our LMR experiments and present our results obtained from clean epitaxial graphene and chemical vapor deposition (CVD) graphene with an h-BN capping layer. We found the saturating magnetoresistance near the high field regime in clean epitaxial graphene system and LMR near the high field regime in CVD graphene with an h-BN capping layer. Our results could pave the way for industrial schemes of graphene-based and air-stable magnetic field sensors with a linear, large response at room temperature.

Keywords: Magnetoresistance, graphene, h-BN, Chemical vapor deposition