Linear magnetoresistance in disordered graphene

Chiashain Chuang^1*, Chi-Te Liang², Gil-Ho Kim³, Yanfei Yang⁴, Ya-Ping Hsieh⁵, Randolph E. Elmquist⁴, Nobuyuki Aoki⁶

¹Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan, Taiwan
²Department of Physics, National Taiwan University, Taipei, Taiwan
³School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, Korea
⁴National Institute of Standard and Technology, Gaithersburg, Taiwan
⁵Institute of Atomic and Molecular Science, Academia Sinica, Taipei, Taiwan
⁶Graduate of School of Engineering, Chiba University, Chiba, Japan

* Presenter:Chiashain Chuang, email:chiashain@gmail.com

Linear magnetoresistance (LMR) is an interesting phenomenon in condensed matter physics. I will present our recent works on LMR observed in disordered graphene systems. Recently, disordered graphene can be considered as a resistance network. I will introduce our LMR experiments and present our results obtained from clean epitaxial graphene and chemical vapor deposition (CVD) graphene with an h-BN capping layer. We found the saturating magnetoresistance near the high field regime in clean epitaxial graphene system and LMR near the high field regime in CVD graphene with an h-BN capping layer. Our results could pave the way for industrial schemes of graphene-based and air-stable magnetic field sensors with a linear, large response at room temperature.

Keywords: Magnetoresistance, graphene, h-BN, Chemical vapor deposition