Abnormal Body Current Increase after Hot Carrier Stress in n-FinFET

Yun-Hsuan Lin^1*, Chein-Yu Lin², Ting-Chang Chang¹, Yen-Cheng Chang¹, Kuan-Hsu Chen¹

¹Physics, National Sun-Yat-Sen University, Kaohsiung, Taiwan
²Photonics, National Sun-Yat-Sen University, Kaohsiung, Taiwan

* Presenter:Yun-Hsuan Lin, email:ninilin850716@gmail.com

The device is submitted to the gate (V_G) and drain bias (V_D), the degradation mechanism after hot carrier degradation (hot carrier stress, HCS) operation is investigated. This experiment is expected to discuss the effect of the HCS operation. Generally, the body current will continue to decrease. However, we find that the I_sub anomaly first decrease and then rises, and use the different design of experiments to clarify the cause of the abnormal rise.

Keywords: FinFET, Hot carrier stress, body current