Fabrication and Characterization of Ⅲ -Ⅴ 2DEG Magnetic Sensors

Wilson Y.S. Su^1*, Chii-Bin Wu¹, Jyh-Shyang Wang¹, Ji-Lin Shen¹, Kuan-Cheng Chiu¹

¹Department of Physics, Chung Yuan Christian University, Chung-Li District, Taoyuan City, Taiwan

* Presenter:Wilson Y.S. Su, email:wilsonsu1969@gmail.com

Fabrication and characterization of a basic 2DEG Hall structure of AlGaAs/InxGa1-xAs with a Si δ-doped layer were studied. Through the analyses from noise spectra, low temperature photoluminescence spectra, Raman scattering spectra and temperature-dependence of Hall-effect measurements, the optimized epi-structure and channel pattern were investigated. A best sensitivity of 520 V/A·T under the current-drive mode was achieved from this 2DEG Hall structure which is better than that of the commercially available magnetic sensors.

Keywords: Hall Effect,, 2DEG, AlGaAs/InxGa1-xAs