Fabrication and Characterization of Ⅲ -Ⅴ 2DEG Magnetic Sensors
Wilson Y.S. Su1*, Chii-Bin Wu1, Jyh-Shyang Wang1, Ji-Lin Shen1, Kuan-Cheng Chiu1
1Department of Physics, Chung Yuan Christian University, Chung-Li District, Taoyuan City, Taiwan
* Presenter:Wilson Y.S. Su, email:wilsonsu1969@gmail.com
Fabrication and characterization of a basic 2DEG Hall structure of AlGaAs/InxGa1-xAs with a Si δ-doped layer were studied. Through the analyses from noise spectra, low temperature photoluminescence spectra, Raman scattering spectra and temperature-dependence of Hall-effect measurements, the optimized epi-structure and channel pattern were investigated. A best sensitivity of 520 V/A·T under the current-drive mode was achieved from this 2DEG Hall structure which is better than that of the commercially available magnetic sensors.

Keywords: Hall Effect,, 2DEG, AlGaAs/InxGa1-xAs