Interface Engineering in Group III-VI Layered Materials and Its Heterostructures
Yi-Ying Lu1*, Yan-Ting Huang1, Chen-Hsu Chang1, Hui-Lin Yeh1, Golda Filipina Gianan1, He-Wen Chen1, Yu-Ting Peng1, Ting Chen1, Chein-Cheng Kuo1, Chia-Hao Chen2
1Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
* Presenter:Yi-Ying Lu,
Layered materials processing dangling bond-free surface have provided multiple degrees of freedom for assembling the van der Waals heterostructures (vdWHs) with atomic-scale control over the electronic states without the restriction of lattice matching. (GaSe) and indium selenide (InSe), group-III monochalcogenides (MX, M = Ga and In; X = S and Se), process tunable direct band gap in multilayer, whereas transition-metal dichalcogenides has a direct band gap only in monolayer. Apart from their peculiar thickness-dependent optoelectronic properties, the tendency of forming native oxides on surface layers renders tunability of their carrier densities. In this talk, some of our recent works in study of (i) persistent electrical-gating effect realized by interface engineering in few-layered InSe, (ii) potential mapping of InSe field-effect transistor by operando scanning photoelectron microscopy, and (iii) charge transport at interface of InSe/GaSe heterojunction with the presence of depletion region, will be highlighted.

Keywords: Interface Engineering, Indium selenide, Gallium selenide, van der Waals heterostructure, operando scanning photoelectron microscopy