Comparison of electron beam lithography and photolithography to electrical property of WSe2 field effect transistor

hsinyu khor^1*

¹電子所, 清華大學, 新竹市, Taiwan

* Presenter:hsinyu khor, email:sofia840604@gmail.com

Electrical metal contact to two-dimensional material is crucial to device performance due to strong fermi level pinning. Since material may be damaged by electron beam lithography during the process, we try to look into how electron beam affect the material. By adding the area dose, electron beam might cause more defects on the material which cause fermi level pinning. We investigate how electron beam damage the material by comparing the transfer characteristic of MoS2 field effect transistor using photolithography and electron beam lithography with different area dose respectively.

Keywords: electron beam lithography, fermi level pinning