MoS2 Field-effect Transistors with Graphene Nanogap Channel formed by Grain Boundary Technique
Tsung-Han Tsai1*
1Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, Taiwan
* Presenter:Tsung-Han Tsai,
Molybdenum disulfide (MoS2) has been widely studied due to its novel properties for electronics and optoelectronics. Thanks to the excellent contact property of graphene, graphene/MoS2 vertical heterostructures are intensively used for field-effect transistors (FETs) with low contact resistance. In this work, graphene-contacted short channel MoS2 FETs are fabricated with channel length defined by graphene nanogaps. Graphene nanogaps are formed by the oxidative etching of graphene grain boundaries under thermal annealing. High quality of CVD-grown materials and clean transfer processes enable us to fabricate high-yield and high performance transistors.

Keywords: Molybdenum Disulfide, Heterostructures, Graphene Nanogaps, Oxidative Etching