MoS2 Field-effect Transistors with Graphene Nanogap Channel formed by Grain Boundary Technique

Tsung-Han Tsai^1*

¹Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, Taiwan

* Presenter:Tsung-Han Tsai, email:dasatsai@gmail.com

Molybdenum disulfide (MoS₂) has been widely studied due to its novel properties for electronics and optoelectronics. Thanks to the excellent contact property of graphene, graphene/MoS₂ vertical heterostructures are intensively used for field-effect transistors (FETs) with low contact resistance. In this work, graphene-contacted short channel MoS₂ FETs are fabricated with channel length defined by graphene nanogaps. Graphene nanogaps are formed by the oxidative etching of graphene grain boundaries under thermal annealing. High quality of CVD-grown materials and clean transfer processes enable us to fabricate high-yield and high performance transistors.

Keywords: Molybdenum Disulfide, Heterostructures, Graphene Nanogaps, Oxidative Etching